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	FIB questionaire

Increased chip complexity, shrinking device geometry and integration of multiple modules are the causes for the low success rate for bringing the right chip at the first time. The chip has to undergo more number of iterations till delivering the functionally good one. The corrections in the design and respining the die involve cost and time. Tessolve's VlSI edit capabilities can reduce your device development cost and cycle time without respining the circuit thus saves manufacturing cost. We have a long years of hard earned experience in diagnosing design issues and advising design modifications. Our team performs chip failure analysis to identify the root cause for the failure and suggesting the necessary corrective actions.

VLSI Circuit Edit using FIB ( Focussed Ion Beam ) is a highly localized sub micron process. Popular tool for circuit edit is FIB. Focussed Ion Beam (FIB) circuit edit is a technique where individual conductors can be cut or connected in new ways to modify an integrated circuit. Circuit edits can be performed quickly and efficiently, greatly reducing the time and expense compared to running a new batch of wafers through a fab. It is an excellent way to validate a design flaw or investigate ways to optimize chip performance. 

FIB Circuit Edit employs a finely focused Ga+ ion beam to image, etch and deposit materials on an integrated circuit. The beam 10 nm resolution allows for extremely precise edits to be made. The FIB is coupled to a navigation system (Knights) providing a method to find subsurface features and ensuring that the right edits are made. The high energy Ga+ beam can mill through conductors and, by utilizing the appropriate gas chemistries like tungsten, moly, or silicon dioxide can be precisely deposited using the ion beam.

Role of Circuit Edit using FIB

Capabilities of FIB

• High Image Resolution
• Metal Deposition using Tungsten/Molybdenum as precursor
• Insulator Deposition
• Probe Pad Construction
• High Aspect Ratio VIA filling/milling

Advanced FIB capabilities using GAE

• Enhanced Cu/Al etch
• Enhanced Silicon-Dioxide etch using XeF2 

Resources

• Decapping Facility for IC Package
• Optical Microscope for visual inspection
• Focussed Ion Beam (FIB) for VLSI Circuit Edit
• Probe Station